PART |
Description |
Maker |
MS8150-P2613 |
GaAs Schottky Devices Low RS Flip Chip
|
Microsemi Corporation
|
OH004 OH10004OH004 |
GaAs device - GaAs Hall Devices
|
Matsshita / Panasonic
|
TCM851 |
The TCM850/1/2/3 combines an inverting charge pump and a low noise linear regulator in a single small outline package. They are ideal for biasing GaAS FETs in cellular telephone transmitter power amplifiers All four devices accept a range
|
Microchip
|
OH10003 |
GaAs Hall Devices
|
Matsshita / Panasonic
|
HSCH-9102 HSCH-9151 HSCH-9101 HSCH-9251 |
HSCH-9251 · Beamlead GaAs Schottky barrier diodes HSCH-9101 · Beamlead GaAs Schottky barrier diodes GaAs Beam Lead Schottky Barrier Diodes
|
Agilent (Hewlett-Packard) Agilent(Hewlett-Packard)
|
NP0900SBMCT3G NP3500SCMCT3G NP2300SBMCT3G NP2600SB |
Low Cap TSPD Surge Devices - 80A 98 V, 30 A, SILICON SURGE PROTECTOR, DO-214AA Low Cap TSPD Surge Devices 400 V, SILICON SURGE PROTECTOR, DO-214AA Low Cap TSPD Surge Devices - 80A 260 V, 30 A, SILICON SURGE PROTECTOR, DO-214AA Low Cap TSPD Surge Devices - 80A 300 V, 30 A, SILICON SURGE PROTECTOR, DO-214AA Low Cap TSPD Surge Devices - 80A 130 V, 30 A, SILICON SURGE PROTECTOR, DO-214AA Low Cap TSPD Surge Devices
|
ON Semiconductor
|
MBRF20150CT-Y MBRF20200CT-Y MBRF2060CT-Y |
Discrete Devices -Diode-Schottky
|
Taiwan Semiconductor
|
SR815 |
Discrete Devices -Diode-Schottky
|
Taiwan Semiconductor
|
SK83C SK85C SK86C |
Discrete Devices -Diode-Schottky
|
Taiwan Semiconductor
|
MBR3535R MBR3540R |
High Power Schottky Rectifiers - DO4 Stud Devices
|
America Semiconductor
|
BAT62-02L BAT62-02W BAT62-08S BAT62-07W BAT62-03W |
Latest Silicon Discretes - Schottky Diode for power leveling Schottky Diodes - Low barrier silicon RF Schottky diode for detectors Schottky Diodes - Low barrier silicon RF Schottky diode array
|
Infineon
|